主讲人： Lianping Hou (University of Glasgow)
Dr Hou received his BSc in 1988 from Central-South University of Technology in China, and MSc in 2003 from Huazhong University of Science and Technology in China. From 1992 to 2000, he worked in a major steel & iron enterprise and was appointed a production manager in 1997. In 2005, he received his PhD degree from the Institute of semiconductors, Chinese Academy of Sciences (CAS). In 2006, he joined the Department of Electrical and Electronic Engineering, University of Bristol, UK as a research associate. In 2007, he joined the School of Engineering, University of Glasgow (UOG), as a research associate. In 2012, he was promoted to a research fellow in UOG. In 2016, he was appointed a lecturer in UOG. He has a wide experience of semiconductor laser technology and integrated optics, nanotechnology and photonics, ranging from epitaxial growth through to the design, fabrication and development of new photonic integrated circuits and novel optoelectronic devices. He is a senior IEEE member, an Associate Editor of Electronics Letters. He is also a visiting professor of the Institute of semiconductors (IOS), Chinese academy of Sciences (CAS). He established partnerships with companies, universities, and institutes around the world. He has published more than 120 high level journal and conference papers on a range of optoelectronic devices and systems and currently hold a number of patents; chaired sessions at international conferences; continue to review several top-level journals, such as IEEE J. Quantum Electron., Journal of Lightwave Technology, Photonics Research, IEEE Photon. Technol. Lett, Optics Lett., Optics Express, Journal of Selected Topics in Quantum Electronics, et al.
The passive sections of a monolithic device require a wider bandgap than the active regions, in order to reduce losses due to direct interband absorption. Such bandgap engineering is usually obtained by complicated and time-consuming regrown butt-joint or selective-area growth techniques. We have developed a simple, flexible and low-cost alternative technique - quantum well intermixing (QWI) – to increase the bandgap in selected areas of the wafer post-growth. Based on QWI technique, we have achieved 40 GHz mode-locked lasers with the shortest 490 fs pulse width; 10-GHz and 40-GHz mode-locked laser array monolithically integrated with multi-mode interferometer(MMI) combiner, semiconductor optical amplify and electro-absorption modulator(EAM); CWDM source with 12 nm wavelength separation based on AlGaInAs/InP monolithically integrated DFB laser array; 1.55 µm DFB laser monolithically integrated with power amplifier array to deliver high power beams with a quasi-single spatial-mode far field pattern (FFP).